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The Influence of the Photoionizing Radiation Spectrum on Metal-Line Ratios in Ly $\alpha$ Forest Clouds

机译:光电离辐射光谱对Ly $ \ alpha $森林云中金属线比的影响

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摘要

Recent measurements of Si IV/C IV ratios in the high-redshift Ly-alpha forest (Songaila & Cowie, AJ, 112, 335 [1996a]; Savaglio et al., A&A, in press [1997]) have opened a new window on chemical enrichment and the first generations of stars. However, the derivation of accurate Si/C abundances requires reliable ionization corrections, which are strongly dependent on the spectral shape of the metagalactic ionizing background and on the ``local effects'' of hot stars in nearby galaxies. Recent models have assumed power-law quasar ionizing backgrounds plus a decrement at 4 Ryd to account for He II attenuation in intervening clouds. However, we show that realistic ionizing backgrounds based on cosmological radiative transfer models produce more complex ionizing spectra between 1-5 Ryd that are critical to interpreting ions of Si and C. We also make a preliminary investigation of the effects of He II ionization front non-overlap. Because the attenuation and re-emission by intervening clouds enhance Si IV relative to C IV, the observed high Si IV/C IV ratios do not require an unrealistic Si overproduction [Si/C $\geq 3 (Si/C)_{\odot}$]. If the ionizing spectrum is dominated by ``local effects'' from massive stars, even larger Si IV/C IV ratios are possible. However, unless stellar radiation dominates quasars by more than a factor of 10, we confirm the evidence for some Si overproduction by massive stars; values Si/C $\approx 2 (Si/C)_{\odot}$ fit the measurements better than solar abundances. Ultimately, an adequate interpretation of the ratios of C IV, Si IV, and C II may require hot, collisionally ionized gas in a multiphase medium.
机译:最近对高红移Ly-alpha森林中Si IV / C IV比的测量(Songaila&Cowie,AJ,112,335 [1996a]; Savaglio等人,A&A,印刷中[1997])打开了一个新窗口关于化学富集和第一代恒星。然而,要获得准确的Si / C丰度,就需要可靠的电离校正,这主要取决于超银河系电离背景的光谱形状以及附近星系中热星的``局部效应''。最近的模型假设幂律类星体电离背景加上4 Ryd的减量,以说明中间云中He II的衰减。但是,我们显示,基于宇宙学辐射转移模型的真实电离背景会产生1-5 Ryd之间的更复杂的电离光谱,这对于解释Si和C离子至关重要。我们还对He II电离锋面的影响进行了初步研究。 -交叠。由于中间云的衰减和再发射使Si IV相对于C IV增强,因此观察到的高Si IV / C IV比值不需要不切实际的Si过量生产[Si / C $ \ geq 3(Si / C)_ {\ odot} $]。如果电离光谱受大质量恒星的``局部效应''支配,则更大的Si IV / C IV比是可能的。但是,除非恒星辐射在类星体中占主导地位超过10倍,否则我们将证实大量恒星会过量生产Si的证据。 Si / C $ \大约2(Si / C)_ {\ odot} $的值比太阳丰度更适合测量。最终,要正确解释C IV,Si IV和C II之比,可能需要在多相介质中产生碰撞碰撞的热电离气体。

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  • 作者

    Giroux, M L; Shull, J M;

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  • 年度 1997
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  • 原文格式 PDF
  • 正文语种 eng
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